UK-based fabless, clean-tech semiconductor company Cambridge GaN Devices (CGD) is demonstrating how its ICeGaN technology brings the benefits of gallium nitride (GaN), including efficiency, size and thermal management, to applications including inverters, industrial power supplies and EVs.
The company’s Combo ICeGaN offering pairs its ICeGaN GaN integrated circuits (ICs) with IGBTs for electric vehicle inverters at 100 kW+, which it says improve efficiency over traditional silicon products and cost less than silicon carbide products.
CGD has developed a 3-Level ANPC EV inverter for 800 V traction with IFP Energies nouvelles (IFPEN), a French public research organization. Enhanced motor performance, reliability and efficiency increases inverter efficiency, lowers THD and reduces dV/dt at the motor. The inverter has a 650 V 25 mΩ full bridge 4-10 kW reference design.
The DHDFN package features double side cooling to reduce thermal resistance, enabling high power density, while dual-gate pinout simplifies PCB routing. Clean switching allows for full current (400 V, 120 A) in double-pulse test.
“By integrating the interface circuitry on the GaN chip along with the HEMT, ICeGaN is very easy to use. Devices can be driven using a standard power IC driver. Moreover, it is very rugged and robust, and includes extra protection circuitry, so reduces component count,” said Henryk Dabrowski, CGD’s Senior Vice President of Global Sales. “Engineers are beginning to realize that GaN may replace SiC in certain high efficiency designs, due to its lower manufacturing cost.”
“CGD’s latest P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency. We have built a secure supply chain including manufacturing deals with TSMC and ASE, and distribution through Digi-Key. With Combo ICeGaN, our technology roadmap has been extended to address EV applications to over 100 kW,” said Giorgia Longobardi, CGD’s founder and CEO.
Source: Cambridge GaN Devices
